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| MMBTA42 / MMBTA43 MMBTA42 / MMBTA43 NPN Version 2005-06-21 1.1 Surface mount High Voltage Transistors Hochspannungs-Transistoren fur die Oberflachenmontage Power dissipation Verlustleistung 0.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 2.9 0.1 0.4 3 1.3 Type Code 1 2 2.5 max Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Grenzwerte (TA = 25C) MMBTA42 300 V 300 V 6V 250 mW 1) 500 mA -65...+150C -65...+150C MMBTA43 200 V 200 V Tj TS Characteristics (Tj = 25C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 160 V Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 6 V IC = 0, VEB = 4 V IC = 20 mA, IB = 2 mA Base saturation voltage - Basis-Sattigungsspannung 2) IC = 20 mA, IB = 2 mA VBEsat - MMBTA42 MMBTA43 IEB0 IEB0 VCEsat - - - MMBTA42 MMBTA43 ICB0 ICB0 - - Kennwerte (Tj = 25C) Typ. - - - - - - Max. 100 nA 100 nA 100 nA 100 nA 500 mV 900 mV Collector saturation voltage - Kollektor-Sattigungsspannung 2) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBTA42 / MMBTA43 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base capacitance - Kollektor-Basis-Kapazitat VCB = 20 V, IE =ie = 0, f = 1 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung MMBTA42 MMBTA43 CCB0 CCB0 RthA - - - - < 420 K/W 1) MMBTA92, MMBTA93 MMBTA42 = 1D MMBTA43 = 1E 3 pF 4 pF fT 50 MHz - - hFE hFE hFE 25 40 40 - - - - - - Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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